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  • Very high modulus, up to 1350°C
  • AGC SiC will not deflect at high temperatures
  • Excellent CTE (coefficient of thermal expansion) match with silicon wafers
  • Very low thermal stress of PV cell during high temperature processing
  • Extremely long SiC parts lifetime
  • Superior cost-of-ownership compared with other materials
 

Product Features

Material Properties

Properties
Unit
SiC+Si Substrate
SiC+CVD Coating
AIN

Density

Porosity

Hardness

Bending Strength

Young's Modulus

CTE*

Thermal Conductivity

Electrical Resistivity

g/cm3

%

GPa

Mpa

GPa

x10-6/K

W/m-k

Ω-cm

3.02

0

25

230

350

4.3

170

10-1

3.21

0

25

230

350

4.3

170

10-1

3.28

1

13

390

310

4.5

150

1014

* Coefficient of Thermal Expansion

Material Purity

AGC’s CVD-Coated SiC only allows for insignificant levels of trace materials creating highly pure, solid and uniform components.

Element
SiC+Si Substrate
Sic+CVD Coating
Quartz

Fe

Al

Ni

Ca

Cu

Na

Ti

3

25

1

5

<1

<1

1

0.028

0.017

0.004

0.015

0.008

0.004

0.003

0.1-0.8

8-28

0.05

0.2-1.0

0.005-0.1

0.2-2.0

0.3-2.0

all data PPM by weight
 
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