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AGC offers a full line of high-purity recrystallized and CVD-Coated Silicon Carbide (SiC) furnace components for Vertical, Horizontal and Single Wafer processes. AGC’s SiC materials are preferred worldwide by furnace manufacturers and wafer fabs whose processes demand the use of high-purity precision components.

With ppb purity levels and a melting point of >1400°C, AGC’s CVD-Coated SiC is the material of choice for High-Temperature and LPCVD processes. Likewise, it is virtually impervious to acid etc, resulting in consistent and repeatable performance time after time.

AGC’s SiC materials are available in 150mm - 300mm for all major horizontal and vertical systems.

 

Product Features

Material Strength at High Temperature:

 
Unit Quartz SiC+CVD
Bending Strength
PSI 6200 33000
MPa 42 230
kgf/mm2 4.3 23
Softening Point
°C 1070 >1400

Material Purity

(PPM By Weight)
  SiC + Si substrate SiC-CVD Coating Quartz
analysis method ICP GDMS ICP

AL

Ca

Cr

Cu

Fe

K

Mg

Mn

Na

Ni

Ti

V

Zn

12.9

3.9

<0.6*

<0.5*

3.8

<0.2*

<0.2*

<0.2*

<0.6*

0.7

1

1

<0.4*

0.09

<0.03*

<0.04*

<0.008*

0.013

<0.02

NA

NA

0.01

<0.006*

NA

NA

NA

0.8

0.5

NA

0.01

0.4

0.1

0.1

NA

0.1

NA

0.5

NA

NA

Comparison of Thermal Expansion Coefficient (CTE)

Chemical Etch Resistance

SiC vs. Quartz in LPCVD Processes

Superior CVD Coating

 
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