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AGC's low OH AQ fused silica wafers offer high strength, maximum temperature range and excellent optical transmission properties. This combination allows manufacturers to create new device structures or improve current manufacturing yields to unprecedented levels.

AGC's fused silica wafers have low hydroxy content and ultra low impurity levels which provide the p-Si TFT display device, silicon-on-insulator (SOI) and optical device and biochip manufacturers a stable and cost effective substrate for production.

 

Product Features

Wafer Grades:

Code Use Characteristic
AQ Optical Displays Normal Quartz
QJ High Temp p-SITFT Displays Low OH-
Few Impurities
Low Birefringence

Wafer Sizes

Code Size Thickness
Square Type 4"square ~ 8" square t0.5 ~ t3.0
Wafer Type
With orientation flat or notch
Ø4" ~ 12" t0.5 ~ t3.0

QJ Material Impruity (Typical Data)

unit:ppb

Fe Na Ti Cr Cu K Ca Mg Zn Mn Al
<0.3 <0.2 <0.6 <0.3 <0.3 <0.3 <0.3 <0.3 <0.6 <0.3 <0.3    
ICP-tyMS analysis

Typical Properties

      AQ
Chemical Constitution SiO2 wt (%) 100
Thermal Properties CTE
Softening Point
Annealing Point
Strain Point
ppm/K (50-200°C)
°C
°C
°C
0.6
1,600
1,120
1,060
Optical Properties Refracive Index nD 1.46
Chemical Properties Acid Resistance
Alkali Resistance
mg/cm2
mg/cm2
0.000
0.032
Mechanical Properties Density
Young's Modulus
Knoop Micro Hardness
g/cm3
GPa
kg/mm2
2.20
74
540
Electrical Properties Bulk Resistive
Dielectric Constant
log (Ω•cm) at 200°C
at 1MH,R.T.  
12.5
4.0  
typical data, not guaranteed
 
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