Photomask Substrates

AGC offers the most advanced materials for photomask substrates available today. Outstanding features include low thermal expansion, high purity, high optical transmission at deep ultraviolet wavelengths, and high chemical durability.

Grades:

AQ Photomask substrates for i-line and KrF excimer lasers lithography
QC-i Photomask substrates for ArF excimer laser lithography

  • 193nm Internal transmittance: > 99.7%/cm
  • Resistance to ArF laser irradiation: No damage caused by 0.12mJ/cm2/pulse at 2000Hz, 5×109 pulse. Low birefringence: <1nm/cm @ 193nm

Flatness

<100nm for each side.

Polishing Defect Status

Low defect counts.

Typical Properties

AQ
Chemical Constitution SiO2 wt (%) 100
Thermal Properties CTE
Softening Point
Annealing Point
Strain Point		 ppm/K (50-200°C)
°C
°C
°C		 0.6
1,600
1,120
1,060
Optical Properties Refracive Index nD 1.46
Chemical Properties Acid Resistance
Alkali Resistance		 mg/cm2
mg/cm2		 0.000
0.032
Mechanical Properties Density
Young’s Modulus
Knoop Micro Hardness		 g/cm3
GPa
kg/mm2		 2.20
74
540
Electrical Properties Bulk Resistive
Dielectric Constant		 log (Ω•cm) at 200°C
at 1MH,R.T.		 12.5
4.0

Typical data, not guaranteed

Contact us to Request Product Literature and More Information

Please email ea.customerservice@agc.com